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Analysis and Comparison of the Breakdown Performance of Semi-Insulator and Dielectric Passivated Si Strip Detectors

机译：半绝缘子和钝化硅条检测器击穿性能的分析与比较

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The harsh radiation environment in future high-energy physics (HEP) ........

机译：未来高能物理（HEP）中恶劣的辐射环境.....

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Rajan, K; Bhardwaj, Ashutosh; Chatterji, Sudeep; Krivastava, A; Shivpuri, Ram Krishen;
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年度 2002
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正文语种 eng
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1. Analysis and comparison of the breakdown performance of semi-insulator and dielectric passivated Si strip detectors [J] . Kirti Ranjan, Ashutosh Bhardwaj, Namrata, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2002,第3期

机译：半绝缘子和电介质钝化硅带探测器的击穿性能分析与比较
2. Analysis and optimal design of semi-insulator passivated high-voltage field plate structures and comparison with dielectric passivated structures [J] . Goud C.B., Bhat K.N. IEEE Transactions on Electron Devices . 1994,第10期

机译：半绝缘钝化高压场板结构的分析与优化设计以及与介质钝化结构的比较
3. Two-dimensional breakdown voltage analysis and optimal design of a silicon microstrip detector passivated by a dielectric [J] . Ajay K Srivastava, Ashutosh Bhardwaj, Kirti Ranjan Semiconductor science and technology . 2002,第5期

机译：电介质钝化的硅微带线检测器的二维击穿电压分析和优化设计
4. A T-CAD Analysis Comparison of the Semi insulator and dielectric passivated Silicon microstrip Detector: Impact on breakdown voltage [C] . Ajay K. Srivastava, Ashutosh Bhardwaj, Kirti Ranjan, IEEE Nuclear Science Symposium . 2004

机译：半绝缘子和电介质钝化硅微带检测器的T-CAD分析与比较：对击穿电压的影响
5. Physics-Based Electromigration and Time Dependent Dielectric Breakdown Modeling and Reliability Analysis for Nanometer VLSI Circuits. [D] . Huang, Xin. 2016

机译：纳米VLSI电路的基于物理的电迁移和时变介电击穿建模以及可靠性分析。
6. Improvement of Dielectric Breakdown Performance by Surface Modification in Polyethylene/TiO2 Nanocomposites [O] . Weiwang Wang, Shengtao Li 2019

机译：通过表面改性聚乙烯/ TiO2纳米复合材料改善介电击穿性能
7. Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors [O] . Ranjan, Kirti, Bhardwaj, A, Chatterji, S, 2002

机译：半绝缘和钝化硅条检测器的击穿性能分析与比较

Analysis and Comparison of the Breakdown Performance of Semi-Insulator and Dielectric Passivated Si Strip Detectors

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